Dual N-Channel MOSFET, 40 A, 30 V, 8-Pin 1212 Vishay Siliconix SISC06DN-T1-GE3

RS kodas: 178-3694Gamintojas: Vishay SiliconixGamintojo kodas: SISC06DN-T1-GE3
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

1212

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

46.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

3.15mm

Typical Gate Charge @ Vgs

38.5 nC @ 10 V

Plotis

3.15mm

Serija

TrenchFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

0.7V

Aukštis

1.07mm

Kilmės šalis

China

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Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,332

Each (On a Reel of 3000) (be PVM)

€ 0,402

Each (On a Reel of 3000) (su PVM)

Dual N-Channel MOSFET, 40 A, 30 V, 8-Pin 1212 Vishay Siliconix SISC06DN-T1-GE3
sticker-462

€ 0,332

Each (On a Reel of 3000) (be PVM)

€ 0,402

Each (On a Reel of 3000) (su PVM)

Dual N-Channel MOSFET, 40 A, 30 V, 8-Pin 1212 Vishay Siliconix SISC06DN-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

1212

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

46.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

3.15mm

Typical Gate Charge @ Vgs

38.5 nC @ 10 V

Plotis

3.15mm

Serija

TrenchFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

0.7V

Aukštis

1.07mm

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more