N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

RS kodas: 178-3693Gamintojas: Vishay SiliconixGamintojo kodas: SiS110DN-T1-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

14.2 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

PowerPAK 1212-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

4V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

3.15mm

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

3.15mm

Typical Gate Charge @ Vgs

8.5 nC @ 10 V

Serija

TrenchFET

Minimali darbinė temperatūra

-55 °C

Aukštis

1.07mm

Forward Diode Voltage

1.2V

Kilmės šalis

China

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,251

Each (On a Reel of 3000) (be PVM)

€ 0,304

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 752,85
6000€ 1 505,70
9000€ 2 258,55
12000€ 3 011,40
15000€ 3 764,25
18000€ 4 517,10
21000€ 5 269,95
24000€ 6 022,80
27000€ 6 775,65
30000€ 7 528,50
33000€ 8 281,35
36000€ 9 034,20
39000€ 9 787,05
42000€ 10 539,90
45000€ 11 292,75
sticker-462

€ 0,251

Each (On a Reel of 3000) (be PVM)

€ 0,304

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3
Sandėlio informacija laikinai nepasiekiama.

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 752,85
6000€ 1 505,70
9000€ 2 258,55
12000€ 3 011,40
15000€ 3 764,25
18000€ 4 517,10
21000€ 5 269,95
24000€ 6 022,80
27000€ 6 775,65
30000€ 7 528,50
33000€ 8 281,35
36000€ 9 034,20
39000€ 9 787,05
42000€ 10 539,90
45000€ 11 292,75
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

14.2 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

PowerPAK 1212-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

4V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

3.15mm

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

3.15mm

Typical Gate Charge @ Vgs

8.5 nC @ 10 V

Serija

TrenchFET

Minimali darbinė temperatūra

-55 °C

Aukštis

1.07mm

Forward Diode Voltage

1.2V

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more