Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 Vishay Siliconix SIRC06DP-T1-GE3

RS kodas: 178-3691Gamintojas: Vishay SiliconixGamintojo kodas: SIRC06DP-T1-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

PowerPAK SO-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Plotis

5mm

Transistor Material

Si

Ilgis

5.99mm

Typical Gate Charge @ Vgs

38.5 nC @ 10 V

Serija

TrenchFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

0.7V

Aukštis

1.07mm

Kilmės šalis

China

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,331

Each (On a Reel of 3000) (be PVM)

€ 0,40

Each (On a Reel of 3000) (su PVM)

Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 Vishay Siliconix SIRC06DP-T1-GE3

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 992,25
6000€ 1 984,50
9000€ 2 976,75
12000€ 3 969,00
15000€ 4 961,25
18000€ 5 953,50
21000€ 6 945,75
24000€ 7 938,00
27000€ 8 930,25
30000€ 9 922,50
33000€ 10 914,75
36000€ 11 907,00
39000€ 12 899,25
42000€ 13 891,50
45000€ 14 883,75
sticker-462

€ 0,331

Each (On a Reel of 3000) (be PVM)

€ 0,40

Each (On a Reel of 3000) (su PVM)

Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 Vishay Siliconix SIRC06DP-T1-GE3
Sandėlio informacija laikinai nepasiekiama.

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 992,25
6000€ 1 984,50
9000€ 2 976,75
12000€ 3 969,00
15000€ 4 961,25
18000€ 5 953,50
21000€ 6 945,75
24000€ 7 938,00
27000€ 8 930,25
30000€ 9 922,50
33000€ 10 914,75
36000€ 11 907,00
39000€ 12 899,25
42000€ 13 891,50
45000€ 14 883,75
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

PowerPAK SO-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Plotis

5mm

Transistor Material

Si

Ilgis

5.99mm

Typical Gate Charge @ Vgs

38.5 nC @ 10 V

Serija

TrenchFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

0.7V

Aukštis

1.07mm

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more