N-Channel MOSFET, 60 A, 30 V, 8-Pin SO-8 Vishay Siliconix SiRA12BDP-T1-GE3

RS kodas: 178-3689Gamintojas: Vishay SiliconixGamintojo kodas: SiRA12BDP-T1-GE3
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SO-8

Serija

TrenchFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

5.99mm

Typical Gate Charge @ Vgs

21 nC @ 10 V

Plotis

5mm

Number of Elements per Chip

1

Forward Diode Voltage

1.1V

Aukštis

1.07mm

Minimali darbinė temperatūra

-55 °C

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€ 0,378

Each (On a Reel of 3000) (be PVM)

€ 0,457

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 60 A, 30 V, 8-Pin SO-8 Vishay Siliconix SiRA12BDP-T1-GE3
sticker-462

€ 0,378

Each (On a Reel of 3000) (be PVM)

€ 0,457

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 60 A, 30 V, 8-Pin SO-8 Vishay Siliconix SiRA12BDP-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SO-8

Serija

TrenchFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

5.99mm

Typical Gate Charge @ Vgs

21 nC @ 10 V

Plotis

5mm

Number of Elements per Chip

1

Forward Diode Voltage

1.1V

Aukštis

1.07mm

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more