N-Channel MOSFET, 17.2 A, 200 V, 8-Pin PowerPAK SO-8 Vishay Siliconix Si7172ADP-T1-RE3

RS kodas: 178-3664Gamintojas: Vishay SiliconixGamintojo kodas: Si7172ADP-T1-RE3
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

17.2 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

PowerPAK SO-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

5mm

Transistor Material

Si

Ilgis

5.99mm

Typical Gate Charge @ Vgs

19.5 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.07mm

Serija

TrenchFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Kilmės šalis

China

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

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€ 0,753

Each (On a Reel of 3000) (be PVM)

€ 0,911

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 17.2 A, 200 V, 8-Pin PowerPAK SO-8 Vishay Siliconix Si7172ADP-T1-RE3
sticker-462

€ 0,753

Each (On a Reel of 3000) (be PVM)

€ 0,911

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 17.2 A, 200 V, 8-Pin PowerPAK SO-8 Vishay Siliconix Si7172ADP-T1-RE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

17.2 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

PowerPAK SO-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

5mm

Transistor Material

Si

Ilgis

5.99mm

Typical Gate Charge @ Vgs

19.5 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.07mm

Serija

TrenchFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Kilmės šalis

China