P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Vishay Siliconix Si2319DDS-T1-GE3

RS kodas: 178-3663Gamintojas: Vishay SiliconixGamintojo kodas: Si2319DDS-T1-GE3
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Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

12.5 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

3.04mm

Plotis

1.4mm

Number of Elements per Chip

1

Serija

TrenchFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

1.02mm

Kilmės šalis

China

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Patikrinkite dar kartą.

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€ 0,176

Each (On a Reel of 3000) (be PVM)

€ 0,213

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Vishay Siliconix Si2319DDS-T1-GE3
sticker-462

€ 0,176

Each (On a Reel of 3000) (be PVM)

€ 0,213

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Vishay Siliconix Si2319DDS-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

12.5 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

3.04mm

Plotis

1.4mm

Number of Elements per Chip

1

Serija

TrenchFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

1.02mm

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more