Toshiba TTD1415B,S4X(S Dual PNP Darlington Transistor, 7 A 100 V HFE:1000, 3-Pin TO-220SIS
Techniniai dokumentai
Specifikacijos
Markė
ToshibaTransistor Type
PNP
Maximum Continuous Collector Current
7 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
6 V
Pakuotės tipas
TO-220SIS
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2 V
Maximum Collector Base Voltage
120 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
2µA
Aukštis
15mm
Plotis
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Matmenys
10 x 4.5 x 15mm
Maksimali darbinė temperatūra
+150 °C
Ilgis
100mm
Base Current
0.7A
Kilmės šalis
Japan
Produkto aprašymas
NPN Darlington Transistors, Toshiba
Bipolar Transistors, Toshiba
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€ 0,668
Each (In a Pack of 10) (be PVM)
€ 0,808
Each (In a Pack of 10) (su PVM)
10
€ 0,668
Each (In a Pack of 10) (be PVM)
€ 0,808
Each (In a Pack of 10) (su PVM)
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 20 | € 0,668 | € 6,68 |
| 30+ | € 0,59 | € 5,90 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ToshibaTransistor Type
PNP
Maximum Continuous Collector Current
7 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
6 V
Pakuotės tipas
TO-220SIS
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2 V
Maximum Collector Base Voltage
120 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
2µA
Aukštis
15mm
Plotis
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Matmenys
10 x 4.5 x 15mm
Maksimali darbinė temperatūra
+150 °C
Ilgis
100mm
Base Current
0.7A
Kilmės šalis
Japan
Produkto aprašymas
NPN Darlington Transistors, Toshiba
Bipolar Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products