Toshiba TTD1409B,S4X(S Dual NPN Darlington Transistor, 6 A 400 V HFE:100, 3-Pin TO-220SIS

RS kodas: 144-5246Gamintojas: ToshibaGamintojo kodas: TTD1409B,S4X(S
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Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Transistor Type

NPN

Maximum Continuous Collector Current

6 A

Maximum Collector Emitter Voltage

400 V

Maximum Emitter Base Voltage

5 V

Pakuotės tipas

TO-220SIS

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

100

Maximum Base Emitter Saturation Voltage

2.5 V

Maximum Collector Base Voltage

600 V

Maximum Collector Emitter Saturation Voltage

2 V

Maximum Collector Cut-off Current

20µA

Maksimali darbinė temperatūra

+150 °C

Ilgis

10mm

Base Current

1A

Aukštis

15mm

Plotis

4.5mm

Maximum Power Dissipation

25 W @ 25 °C

Matmenys

10 x 4.5 x 15mm

Kilmės šalis

Japan

Produkto aprašymas

NPN Darlington Transistors, Toshiba

Bipolar Transistors, Toshiba

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Patikrinkite dar kartą.

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€ 0,775

Each (In a Pack of 10) (be PVM)

€ 0,938

Each (In a Pack of 10) (su PVM)

Toshiba TTD1409B,S4X(S Dual NPN Darlington Transistor, 6 A 400 V HFE:100, 3-Pin TO-220SIS
sticker-462

€ 0,775

Each (In a Pack of 10) (be PVM)

€ 0,938

Each (In a Pack of 10) (su PVM)

Toshiba TTD1409B,S4X(S Dual NPN Darlington Transistor, 6 A 400 V HFE:100, 3-Pin TO-220SIS
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 20€ 0,775€ 7,75
30+€ 0,656€ 6,56

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Transistor Type

NPN

Maximum Continuous Collector Current

6 A

Maximum Collector Emitter Voltage

400 V

Maximum Emitter Base Voltage

5 V

Pakuotės tipas

TO-220SIS

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

100

Maximum Base Emitter Saturation Voltage

2.5 V

Maximum Collector Base Voltage

600 V

Maximum Collector Emitter Saturation Voltage

2 V

Maximum Collector Cut-off Current

20µA

Maksimali darbinė temperatūra

+150 °C

Ilgis

10mm

Base Current

1A

Aukštis

15mm

Plotis

4.5mm

Maximum Power Dissipation

25 W @ 25 °C

Matmenys

10 x 4.5 x 15mm

Kilmės šalis

Japan

Produkto aprašymas

NPN Darlington Transistors, Toshiba

Bipolar Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more