N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON Toshiba TPN14006NH,L1Q(M

RS kodas: 171-2206Gamintojas: ToshibaGamintojo kodas: TPN14006NH,L1Q(M
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Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

TSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.1mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Plotis

3.1mm

Forward Diode Voltage

1.2V

Aukštis

0.85mm

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€ 0,433

Each (On a Reel of 5000) (be PVM)

€ 0,524

Each (On a Reel of 5000) (su PVM)

N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON Toshiba TPN14006NH,L1Q(M
sticker-462

€ 0,433

Each (On a Reel of 5000) (be PVM)

€ 0,524

Each (On a Reel of 5000) (su PVM)

N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON Toshiba TPN14006NH,L1Q(M
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
5000 - 5000€ 0,433€ 2 163,00
10000+€ 0,40€ 2 000,25

Ideate. Create. Collaborate

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No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

TSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.1mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Plotis

3.1mm

Forward Diode Voltage

1.2V

Aukštis

0.85mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more