Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
30 V
Series
U-MOSVIII-H
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
3.1mm
Length
3.1mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.85mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
€ 5.14
€ 0.257 Each (In a Pack of 20) (Exc. Vat)
€ 6.22
€ 0.311 Each (In a Pack of 20) (inc. VAT)
20

€ 5.14
€ 0.257 Each (In a Pack of 20) (Exc. Vat)
€ 6.22
€ 0.311 Each (In a Pack of 20) (inc. VAT)
Stock information temporarily unavailable.
20

Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 80 | € 0.257 | € 5.14 |
| 100 - 180 | € 0.218 | € 4.36 |
| 200 - 980 | € 0.202 | € 4.04 |
| 1000 - 1980 | € 0.195 | € 3.90 |
| 2000+ | € 0.189 | € 3.78 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
30 V
Series
U-MOSVIII-H
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
3.1mm
Length
3.1mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.85mm
Country of Origin
Japan
Product details


