N-Channel MOSFET, 38 A, 30 V, 8-Pin SOP Toshiba TPH8R903NL,LQ(S
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
30 V
Serija
U-MOSVIII-H
Pakuotės tipas
SOP
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
12.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
5mm
Typical Gate Charge @ Vgs
9.8 nC @ 10 V
Aukštis
0.95mm
Forward Diode Voltage
1.2V
Kilmės šalis
Japan
Produkto aprašymas
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 7,71
€ 0,386 Each (In a Pack of 20) (be PVM)
€ 9,33
€ 0,467 Each (In a Pack of 20) (su PVM)
20
€ 7,71
€ 0,386 Each (In a Pack of 20) (be PVM)
€ 9,33
€ 0,467 Each (In a Pack of 20) (su PVM)
20
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 20 - 80 | € 0,386 | € 7,71 |
| 100 - 180 | € 0,353 | € 7,07 |
| 200 - 980 | € 0,346 | € 6,92 |
| 1000 - 1980 | € 0,332 | € 6,63 |
| 2000+ | € 0,324 | € 6,48 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
30 V
Serija
U-MOSVIII-H
Pakuotės tipas
SOP
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
12.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
5mm
Typical Gate Charge @ Vgs
9.8 nC @ 10 V
Aukštis
0.95mm
Forward Diode Voltage
1.2V
Kilmės šalis
Japan
Produkto aprašymas
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products