Toshiba U-MOSVIII-H N-Channel MOSFET, 40 A, 60 V, 8-Pin SOP TPH11006NL,LQ(S

Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
60 V
Series
U-MOSVIII-H
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
34 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5mm
Length
5mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.95mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
€ 7.18
€ 0.359 Each (In a Pack of 20) (Exc. Vat)
€ 8.69
€ 0.434 Each (In a Pack of 20) (inc. VAT)
20

€ 7.18
€ 0.359 Each (In a Pack of 20) (Exc. Vat)
€ 8.69
€ 0.434 Each (In a Pack of 20) (inc. VAT)
Stock information temporarily unavailable.
20

Stock information temporarily unavailable.
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
60 V
Series
U-MOSVIII-H
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
34 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5mm
Length
5mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.95mm
Country of Origin
Japan
Product details

