Toshiba TK N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN TK9J90E

RS kodas: 168-7789Gamintojas: ToshibaGamintojo kodas: TK9J90E
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

900 V

Pakuotės tipas

TO-3PN

Serija

TK

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Ilgis

15.5mm

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Typical Gate Charge @ Vgs

46 nC @ 10 V

Number of Elements per Chip

1

Plotis

4.5mm

Aukštis

20mm

Kilmės šalis

Japan

Produkto aprašymas

MOSFET N-channel, TK8 & TK9 Series, Toshiba

MOSFET Transistors, Toshiba

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Sandėlio informacija laikinai nepasiekiama.

€ 80,75

€ 3,23 Each (In a Tube of 25) (be PVM)

€ 97,71

€ 3,908 Each (In a Tube of 25) (su PVM)

Toshiba TK N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN TK9J90E
sticker-462

€ 80,75

€ 3,23 Each (In a Tube of 25) (be PVM)

€ 97,71

€ 3,908 Each (In a Tube of 25) (su PVM)

Toshiba TK N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN TK9J90E
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

900 V

Pakuotės tipas

TO-3PN

Serija

TK

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Ilgis

15.5mm

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Typical Gate Charge @ Vgs

46 nC @ 10 V

Number of Elements per Chip

1

Plotis

4.5mm

Aukštis

20mm

Kilmės šalis

Japan

Produkto aprašymas

MOSFET N-channel, TK8 & TK9 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more