Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
126 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.16mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
49 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
€ 48.05
€ 0.961 Each (In a Tube of 50) (Exc. Vat)
€ 58.14
€ 1.163 Each (In a Tube of 50) (inc. VAT)
50

€ 48.05
€ 0.961 Each (In a Tube of 50) (Exc. Vat)
€ 58.14
€ 1.163 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50

Stock information temporarily unavailable.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 200 | € 0.961 | € 48.05 |
| 250 - 450 | € 0.821 | € 41.05 |
| 500 - 1200 | € 0.802 | € 40.10 |
| 1250+ | € 0.78 | € 39.00 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
126 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.16mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
49 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Country of Origin
China
Product details


