Toshiba TK N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1

RS kodas: 796-5099Gamintojas: ToshibaGamintojo kodas: TK40E06N1
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Serija

TK

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

10.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

67 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.16mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

15.1mm

Produkto aprašymas

MOSFET Transistors, Toshiba

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N-channel MOSFET,SUP60N0618 60A 60V
P.O.A.už 1 vnt. (be PVM)
Sandėlio informacija laikinai nepasiekiama.

€ 5,70

€ 1,14 Each (In a Pack of 5) (be PVM)

€ 6,90

€ 1,379 Each (In a Pack of 5) (su PVM)

Toshiba TK N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1
Pasirinkite pakuotės tipą
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€ 5,70

€ 1,14 Each (In a Pack of 5) (be PVM)

€ 6,90

€ 1,379 Each (In a Pack of 5) (su PVM)

Toshiba TK N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Pakuotė
5 - 45€ 1,14€ 5,70
50 - 120€ 0,998€ 4,99
125 - 245€ 0,95€ 4,75
250 - 495€ 0,886€ 4,43
500+€ 0,819€ 4,09

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
N-channel MOSFET,SUP60N0618 60A 60V
P.O.A.už 1 vnt. (be PVM)

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Serija

TK

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

10.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

67 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.16mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

15.1mm

Produkto aprašymas

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
N-channel MOSFET,SUP60N0618 60A 60V
P.O.A.už 1 vnt. (be PVM)