Toshiba TK N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220SIS TK40A06N1,S4X(S
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Serija
TK
Pakuotės tipas
TO-220SIS
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
10.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
15mm
Kilmės šalis
China
Produkto aprašymas
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 5,58
€ 0,558 Each (In a Pack of 10) (be PVM)
€ 6,75
€ 0,675 Each (In a Pack of 10) (su PVM)
10
€ 5,58
€ 0,558 Each (In a Pack of 10) (be PVM)
€ 6,75
€ 0,675 Each (In a Pack of 10) (su PVM)
10
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 40 | € 0,558 | € 5,58 |
| 50 - 90 | € 0,362 | € 3,62 |
| 100 - 240 | € 0,354 | € 3,54 |
| 250 - 490 | € 0,343 | € 3,43 |
| 500+ | € 0,335 | € 3,35 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Serija
TK
Pakuotės tipas
TO-220SIS
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
10.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
15mm
Kilmės šalis
China
Produkto aprašymas
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products