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Toshiba N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 TK39N60W,S1VF(S

RS kodas: 896-2372Gamintojas: ToshibaGamintojo kodas: TK39N60W,S1VF(S
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

600 V

Serija

TK

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

270 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

5.02mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

15.94mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

20.95mm

Kilmės šalis

China

Produkto aprašymas

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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€ 5,51

€ 5,51 už 1 vnt. (be PVM)

€ 6,67

€ 6,67 už 1 vnt. (su PVM)

Toshiba N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 TK39N60W,S1VF(S
sticker-462

€ 5,51

€ 5,51 už 1 vnt. (be PVM)

€ 6,67

€ 6,67 už 1 vnt. (su PVM)

Toshiba N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 TK39N60W,S1VF(S
Sandėlio informacija laikinai nepasiekiama.
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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kaina
1 - 9€ 5,51
10 - 49€ 4,56
50 - 99€ 4,13
100 - 199€ 4,04
200+€ 3,94

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

600 V

Serija

TK

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

270 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

5.02mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

15.94mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

20.95mm

Kilmės šalis

China

Produkto aprašymas

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more