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Toshiba N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1

RS kodas: 796-5080Gamintojas: ToshibaGamintojo kodas: TK35E08N1
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

80 V

Serija

TK

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

12.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

72 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Ilgis

10.16mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Plotis

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Aukštis

15.1mm

Produkto aprašymas

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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Sandėlio informacija laikinai nepasiekiama.

€ 6,18

€ 1,235 Each (In a Pack of 5) (be PVM)

€ 7,48

€ 1,494 Each (In a Pack of 5) (su PVM)

Toshiba N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1
Pasirinkite pakuotės tipą
sticker-462

€ 6,18

€ 1,235 Each (In a Pack of 5) (be PVM)

€ 7,48

€ 1,494 Each (In a Pack of 5) (su PVM)

Toshiba N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

80 V

Serija

TK

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

12.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

72 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Ilgis

10.16mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Plotis

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Aukštis

15.1mm

Produkto aprašymas

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina