Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 TK31E60W,S1VX(S
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
86 nC @ 10 V
Number of Elements per Chip
1
Width
4.45mm
Height
15.1mm
Country of Origin
China
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 187.50
€ 3.75 Each (In a Tube of 50) (Exc. Vat)
€ 226.88
€ 4.538 Each (In a Tube of 50) (inc. VAT)
50
€ 187.50
€ 3.75 Each (In a Tube of 50) (Exc. Vat)
€ 226.88
€ 4.538 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 200 | € 3.75 | € 187.50 |
| 250 - 450 | € 3.40 | € 170.00 |
| 500+ | € 3.10 | € 155.00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
86 nC @ 10 V
Number of Elements per Chip
1
Width
4.45mm
Height
15.1mm
Country of Origin
China
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products