N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS Toshiba TK25A60X,S5X(M
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Serija
DTMOSIV
Pakuotės tipas
TO-220SIS
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.5mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Transistor Material
Si
Aukštis
15mm
Forward Diode Voltage
1.7V
Kilmės šalis
Japan
Produkto aprašymas
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 12,11
€ 2,422 Each (In a Pack of 5) (be PVM)
€ 14,65
€ 2,931 Each (In a Pack of 5) (su PVM)
5
€ 12,11
€ 2,422 Each (In a Pack of 5) (be PVM)
€ 14,65
€ 2,931 Each (In a Pack of 5) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 20 | € 2,422 | € 12,11 |
| 25 - 45 | € 2,09 | € 10,45 |
| 50+ | € 1,90 | € 9,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Serija
DTMOSIV
Pakuotės tipas
TO-220SIS
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.5mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Transistor Material
Si
Aukštis
15mm
Forward Diode Voltage
1.7V
Kilmės šalis
Japan
Produkto aprašymas
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products