N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK Toshiba TK15S04N1L,LQ(O
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
DPAK (TO-252)
Serija
U-MOSVIII-H
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Plotis
5.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Aukštis
2.3mm
Kilmės šalis
Japan
Produkto aprašymas
MOSFET Transistors, Toshiba
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€ 5,94
€ 1,188 Each (In a Pack of 5) (be PVM)
€ 7,19
€ 1,437 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 5,94
€ 1,188 Each (In a Pack of 5) (be PVM)
€ 7,19
€ 1,437 Each (In a Pack of 5) (su PVM)
Standartas
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 20 | € 1,188 | € 5,94 |
| 25 - 45 | € 0,998 | € 4,99 |
| 50 - 245 | € 0,998 | € 4,99 |
| 250 - 495 | € 0,95 | € 4,75 |
| 500+ | € 0,922 | € 4,61 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
DPAK (TO-252)
Serija
U-MOSVIII-H
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Plotis
5.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Aukštis
2.3mm
Kilmės šalis
Japan
Produkto aprašymas
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products