N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK Toshiba TK14G65W,RQ(S
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
13.7 A
Maximum Drain Source Voltage
650 V
Serija
DTMOSIV
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
8.8mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
10.35mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Aukštis
4.46mm
Forward Diode Voltage
1.7V
Kilmės šalis
Japan
Produkto aprašymas
MOSFET Transistors, Toshiba
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Patikrinkite dar kartą.
€ 10,69
€ 2,138 Each (In a Pack of 5) (be PVM)
€ 12,93
€ 2,587 Each (In a Pack of 5) (su PVM)
5
€ 10,69
€ 2,138 Each (In a Pack of 5) (be PVM)
€ 12,93
€ 2,587 Each (In a Pack of 5) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 20 | € 2,138 | € 10,69 |
| 25 - 45 | € 1,852 | € 9,26 |
| 50 - 245 | € 1,758 | € 8,79 |
| 250 - 495 | € 1,71 | € 8,55 |
| 500+ | € 1,662 | € 8,31 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
13.7 A
Maximum Drain Source Voltage
650 V
Serija
DTMOSIV
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
8.8mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
10.35mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Aukštis
4.46mm
Forward Diode Voltage
1.7V
Kilmės šalis
Japan
Produkto aprašymas
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products