N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 Toshiba TK100E06N1,S1X(S

RS kodas: 125-0528Gamintojas: ToshibaGamintojo kodas: TK100E06N1,S1X(S
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Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

263 A

Maximum Drain Source Voltage

60 V

Serija

U-MOSVIII-H

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

255 W

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4.45mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10.16mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Aukštis

15.1mm

Forward Diode Voltage

1.2V

Kilmės šalis

Japan

Produkto aprašymas

MOSFET Transistors, Toshiba

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€ 2,362

Each (In a Pack of 5) (be PVM)

€ 2,858

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 Toshiba TK100E06N1,S1X(S
sticker-462

€ 2,362

Each (In a Pack of 5) (be PVM)

€ 2,858

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 Toshiba TK100E06N1,S1X(S
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 20€ 2,362€ 11,81
25 - 45€ 2,152€ 10,76
50 - 120€ 1,942€ 9,71
125+€ 1,838€ 9,19

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

263 A

Maximum Drain Source Voltage

60 V

Serija

U-MOSVIII-H

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

255 W

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4.45mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10.16mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Aukštis

15.1mm

Forward Diode Voltage

1.2V

Kilmės šalis

Japan

Produkto aprašymas

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more