MOSFET Transistor Toshiba TK100A10N1,S4X(S
Techniniai dokumentai
Specifikacijos
Markė
ToshibaMaximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
TO-220SIS
Maximum Drain Source Resistance
3,8 mΩ
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
±20 V
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
140 nC při 10 V
Kilmės šalis
China
Produkto aprašymas
MOSFET Transistors, Toshiba
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Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 3,622
Už kiekviena vnt. (tiekiama dežeje) (be PVM)
€ 4,383
Už kiekviena vnt. (tiekiama dežeje) (su PVM)
2
€ 3,622
Už kiekviena vnt. (tiekiama dežeje) (be PVM)
€ 4,383
Už kiekviena vnt. (tiekiama dežeje) (su PVM)
2
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Maišas |
|---|---|---|
| 2 - 18 | € 3,622 | € 7,24 |
| 20 - 38 | € 3,202 | € 6,40 |
| 40 - 98 | € 2,782 | € 5,56 |
| 100 - 498 | € 2,625 | € 5,25 |
| 500+ | € 2,468 | € 4,94 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ToshibaMaximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
TO-220SIS
Maximum Drain Source Resistance
3,8 mΩ
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
±20 V
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
140 nC při 10 V
Kilmės šalis
China
Produkto aprašymas
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products