Dual N-Channel MOSFET, 400 mA, 60 V, 3-Pin SOT-23 Toshiba T2N7002BK

RS kodas: 171-2411Gamintojas: ToshibaGamintojo kodas: T2N7002BK
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Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

400 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.75 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

1 W

Maximum Gate Source Voltage

±20 V

Plotis

1.3mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Typical Gate Charge @ Vgs

0.39 nC @ 4.5 V

Aukštis

0.9mm

Forward Diode Voltage

1.1V

Kilmės šalis

Thailand

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€ 0,047

Each (On a Reel of 3000) (be PVM)

€ 0,057

Each (On a Reel of 3000) (su PVM)

Dual N-Channel MOSFET, 400 mA, 60 V, 3-Pin SOT-23 Toshiba T2N7002BK
sticker-462

€ 0,047

Each (On a Reel of 3000) (be PVM)

€ 0,057

Each (On a Reel of 3000) (su PVM)

Dual N-Channel MOSFET, 400 mA, 60 V, 3-Pin SOT-23 Toshiba T2N7002BK
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
3000 - 3000€ 0,047€ 141,75
6000 - 6000€ 0,046€ 138,60
9000+€ 0,043€ 129,15

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

400 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.75 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

1 W

Maximum Gate Source Voltage

±20 V

Plotis

1.3mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Typical Gate Charge @ Vgs

0.39 nC @ 4.5 V

Aukštis

0.9mm

Forward Diode Voltage

1.1V

Kilmės šalis

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more