Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 Toshiba SSM6N7002KFU,LF(T
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
US6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
1.2e+006 Ω
Maximum Gate Threshold Voltage
2.1V
Number of Elements per Chip
2
Transistor Material
Silicon
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€ 0,057
Each (On a Reel of 3000) (be PVM)
€ 0,069
Each (On a Reel of 3000) (su PVM)
3000
€ 0,057
Each (On a Reel of 3000) (be PVM)
€ 0,069
Each (On a Reel of 3000) (su PVM)
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
US6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
1.2e+006 Ω
Maximum Gate Threshold Voltage
2.1V
Number of Elements per Chip
2
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products