N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 Toshiba SSM3K339R
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Plotis
1.8mm
Number of Elements per Chip
1
Aukštis
0.7mm
Forward Diode Voltage
1.2V
Kilmės šalis
Thailand
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,096
Each (On a Reel of 3000) (be PVM)
€ 0,116
Each (On a Reel of 3000) (su PVM)
3000
€ 0,096
Each (On a Reel of 3000) (be PVM)
€ 0,116
Each (On a Reel of 3000) (su PVM)
3000
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 3000 - 3000 | € 0,096 | € 286,65 |
| 6000 - 6000 | € 0,091 | € 274,05 |
| 9000+ | € 0,086 | € 258,30 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Plotis
1.8mm
Number of Elements per Chip
1
Aukštis
0.7mm
Forward Diode Voltage
1.2V
Kilmės šalis
Thailand
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products