Silicon P-Channel MOSFET, 6 A, 20 V, 3-Pin SOT-23 Toshiba SSM3J328R,LF(T
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
8.84e+007 Ω
Maximum Gate Threshold Voltage
1V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,066
Each (On a Reel of 3000) (be PVM)
€ 0,08
Each (On a Reel of 3000) (su PVM)
3000
€ 0,066
Each (On a Reel of 3000) (be PVM)
€ 0,08
Each (On a Reel of 3000) (su PVM)
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
8.84e+007 Ω
Maximum Gate Threshold Voltage
1V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products