Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)

RS kodas: 760-3126Gamintojas: ToshibaGamintojo kodas: 2SK209-Y(TE85L,F)
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Žiūrėti viską JFET konstrukcija

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Idss Drain-Source Cut-off Current

1.2 to 3.0mA

Maximum Drain Source Voltage

10 V

Maximum Gate Source Voltage

-30 V

Maximum Drain Gate Voltage

-50V

Transistor Configuration

Single

Configuration

Single

Tvirtinimo tipas

Surface Mount

Pakuotės tipas

SOT-346 (SC-59)

Kaiščių skaičius

3

Matmenys

2.9 x 1.5 x 1.1mm

Maksimali darbinė temperatūra

+125 °C

Ilgis

2.9mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Plotis

1.5mm

Produkto aprašymas

N-channel JFET, Toshiba

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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Patikrinkite dar kartą.

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€ 0,375

Each (In a Pack of 10) (be PVM)

€ 0,454

Each (In a Pack of 10) (su PVM)

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)
Pasirinkite pakuotės tipą
sticker-462

€ 0,375

Each (In a Pack of 10) (be PVM)

€ 0,454

Each (In a Pack of 10) (su PVM)

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 90€ 0,375€ 3,75
100+€ 0,236€ 2,36

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Idss Drain-Source Cut-off Current

1.2 to 3.0mA

Maximum Drain Source Voltage

10 V

Maximum Gate Source Voltage

-30 V

Maximum Drain Gate Voltage

-50V

Transistor Configuration

Single

Configuration

Single

Tvirtinimo tipas

Surface Mount

Pakuotės tipas

SOT-346 (SC-59)

Kaiščių skaičius

3

Matmenys

2.9 x 1.5 x 1.1mm

Maksimali darbinė temperatūra

+125 °C

Ilgis

2.9mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Plotis

1.5mm

Produkto aprašymas

N-channel JFET, Toshiba

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more