P-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold Toshiba 2SJ668(TE16L,NQ)

RS kodas: 415-174Gamintojas: ToshibaGamintojo kodas: 2SJ668(TE16L,NQ)
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Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

PW Mold

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

20 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

15 nC @ 10 V

Number of Elements per Chip

1

Plotis

5.5mm

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.5mm

Minimali darbinė temperatūra

-55 °C

Aukštis

2.3mm

Produkto aprašymas

MOSFET P-Channel, 2SJ Series, Toshiba

MOSFET Transistors, Toshiba

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Patikrinkite dar kartą.

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€ 0,761

Each (In a Pack of 10) (be PVM)

€ 0,921

Each (In a Pack of 10) (su PVM)

P-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold Toshiba 2SJ668(TE16L,NQ)
Pasirinkite pakuotės tipą
sticker-462

€ 0,761

Each (In a Pack of 10) (be PVM)

€ 0,921

Each (In a Pack of 10) (su PVM)

P-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold Toshiba 2SJ668(TE16L,NQ)
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 40€ 0,761€ 7,61
50 - 190€ 0,593€ 5,93
200 - 490€ 0,518€ 5,18
500 - 990€ 0,488€ 4,88
1000+€ 0,476€ 4,76

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

PW Mold

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

20 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

15 nC @ 10 V

Number of Elements per Chip

1

Plotis

5.5mm

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.5mm

Minimali darbinė temperatūra

-55 °C

Aukštis

2.3mm

Produkto aprašymas

MOSFET P-Channel, 2SJ Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more