P-Channel MOSFET, 2.3 A, 15 V, 8-Pin SOIC Texas Instruments TPS1101D

RS kodas: 662-4273Gamintojas: Texas InstrumentsGamintojo kodas: TPS1101D
brand-logo
View all in MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

2.3 A

Maximum Drain Source Voltage

15 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

791 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +2 V

Typical Gate Charge @ Vgs

11.25 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+125 °C

Ilgis

4.9mm

Plotis

3.91mm

Transistor Material

Si

Minimali darbinė temperatūra

-40 °C

Aukštis

1.58mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 2,992

Each (In a Pack of 5) (be PVM)

€ 3,62

Each (In a Pack of 5) (su PVM)

P-Channel MOSFET, 2.3 A, 15 V, 8-Pin SOIC Texas Instruments TPS1101D
sticker-462

€ 2,992

Each (In a Pack of 5) (be PVM)

€ 3,62

Each (In a Pack of 5) (su PVM)

P-Channel MOSFET, 2.3 A, 15 V, 8-Pin SOIC Texas Instruments TPS1101D
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 120€ 2,992€ 14,96
125 - 495€ 2,415€ 12,08
500 - 1245€ 2,152€ 10,76
1250 - 2495€ 1,68€ 8,40
2500+€ 1,522€ 7,61

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

2.3 A

Maximum Drain Source Voltage

15 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

791 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +2 V

Typical Gate Charge @ Vgs

11.25 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+125 °C

Ilgis

4.9mm

Plotis

3.91mm

Transistor Material

Si

Minimali darbinė temperatūra

-40 °C

Aukštis

1.58mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more