Dual P-Channel MOSFET, 120 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87355Q5DT

RS kodas: 133-0159Gamintojas: Texas InstrumentsGamintojo kodas: CSD87355Q5DT
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Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

LSON-CLIP

Serija

NexFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.75V

Maximum Power Dissipation

12 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-8 V, +10 V

Maksimali darbinė temperatūra

+125 °C

Ilgis

6.1mm

Typical Gate Charge @ Vgs

18 nC, 40 nC

Plotis

5.1mm

Number of Elements per Chip

2

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1V

Produkto aprašymas

Power MOSFET Modules, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 1,312

Each (In a Pack of 5) (be PVM)

€ 1,588

Each (In a Pack of 5) (su PVM)

Dual P-Channel MOSFET, 120 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87355Q5DT
Pasirinkite pakuotės tipą
sticker-462

€ 1,312

Each (In a Pack of 5) (be PVM)

€ 1,588

Each (In a Pack of 5) (su PVM)

Dual P-Channel MOSFET, 120 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87355Q5DT
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

LSON-CLIP

Serija

NexFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.75V

Maximum Power Dissipation

12 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-8 V, +10 V

Maksimali darbinė temperatūra

+125 °C

Ilgis

6.1mm

Typical Gate Charge @ Vgs

18 nC, 40 nC

Plotis

5.1mm

Number of Elements per Chip

2

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1V

Produkto aprašymas

Power MOSFET Modules, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more