N-Channel MOSFET, 8 A, 12 V, 6-Pin PICOSTAR Texas Instruments CSD83325LT

RS kodas: 145-6334Gamintojas: Texas InstrumentsGamintojo kodas: CSD83325LT
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

12 V

Pakuotės tipas

PICOSTAR

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

2.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Plotis

2.2mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

1.15mm

Typical Gate Charge @ Vgs

8.4 nC @ 4.5 V

Aukštis

0.2mm

Serija

NexFET

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Philippines

Produkto aprašymas

N-Channel NexFET™ Dual MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 0,895

Each (On a Reel of 250) (be PVM)

€ 1,083

Each (On a Reel of 250) (su PVM)

N-Channel MOSFET, 8 A, 12 V, 6-Pin PICOSTAR Texas Instruments CSD83325LT
sticker-462

€ 0,895

Each (On a Reel of 250) (be PVM)

€ 1,083

Each (On a Reel of 250) (su PVM)

N-Channel MOSFET, 8 A, 12 V, 6-Pin PICOSTAR Texas Instruments CSD83325LT
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
250 - 250€ 0,895€ 223,65
500 - 1000€ 0,85€ 212,62
1250+€ 0,764€ 191,10

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

12 V

Pakuotės tipas

PICOSTAR

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

2.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Plotis

2.2mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

1.15mm

Typical Gate Charge @ Vgs

8.4 nC @ 4.5 V

Aukštis

0.2mm

Serija

NexFET

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Philippines

Produkto aprašymas

N-Channel NexFET™ Dual MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more