P-Channel MOSFET, 5 A, 8 V, 9-Pin DSBGA Texas Instruments CSD22204WT

RS kodas: 145-7461Gamintojas: Texas InstrumentsGamintojo kodas: CSD22204WT
brand-logo
View all in MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

8 V

Pakuotės tipas

DSBGA

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

9

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

1.5mm

Typical Gate Charge @ Vgs

18.9 nC @ 4 V

Plotis

1.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Aukštis

0.35mm

Serija

NexFET

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Philippines

Produkto aprašymas

P-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,089

Each (On a Reel of 250) (be PVM)

€ 0,108

Each (On a Reel of 250) (su PVM)

P-Channel MOSFET, 5 A, 8 V, 9-Pin DSBGA Texas Instruments CSD22204WT
sticker-462

€ 0,089

Each (On a Reel of 250) (be PVM)

€ 0,108

Each (On a Reel of 250) (su PVM)

P-Channel MOSFET, 5 A, 8 V, 9-Pin DSBGA Texas Instruments CSD22204WT
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

8 V

Pakuotės tipas

DSBGA

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

9

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

1.5mm

Typical Gate Charge @ Vgs

18.9 nC @ 4 V

Plotis

1.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Aukštis

0.35mm

Serija

NexFET

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Philippines

Produkto aprašymas

P-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more