Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Maximum Operating Temperature
+175 °C
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
16.51mm
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
€ 7.75
€ 1.55 Each (In a Pack of 5) (Exc. Vat)
€ 9.38
€ 1.876 Each (In a Pack of 5) (inc. VAT)
Standard
5

€ 7.75
€ 1.55 Each (In a Pack of 5) (Exc. Vat)
€ 9.38
€ 1.876 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5

Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | € 1.55 | € 7.75 |
| 25 - 45 | € 1.20 | € 6.00 |
| 50+ | € 1.20 | € 6.00 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Maximum Operating Temperature
+175 °C
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
16.51mm
Product details


