Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Country of Origin
Philippines
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
€ 40.70
€ 0.814 Each (In a Tube of 50) (Exc. Vat)
€ 49.25
€ 0.985 Each (In a Tube of 50) (inc. VAT)
50

€ 40.70
€ 0.814 Each (In a Tube of 50) (Exc. Vat)
€ 49.25
€ 0.985 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50

Stock information temporarily unavailable.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | € 0.814 | € 40.70 |
| 100 - 200 | € 0.732 | € 36.60 |
| 250 - 450 | € 0.692 | € 34.60 |
| 500 - 700 | € 0.663 | € 33.15 |
| 750+ | € 0.647 | € 32.35 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Country of Origin
Philippines
Product details


