N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS

RS kodas: 900-9964Gamintojas: Texas InstrumentsGamintojo kodas: CSD19534KCS
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Serija

NexFET

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

118 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.67mm

Typical Gate Charge @ Vgs

17.1 nC @ 0 V

Plotis

4.7mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Aukštis

16.51mm

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 1,47

Each (In a Pack of 5) (be PVM)

€ 1,779

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS
Pasirinkite pakuotės tipą
sticker-462

€ 1,47

Each (In a Pack of 5) (be PVM)

€ 1,779

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 20€ 1,47€ 7,35
25 - 45€ 1,102€ 5,51
50+€ 1,102€ 5,51

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Serija

NexFET

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

118 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.67mm

Typical Gate Charge @ Vgs

17.1 nC @ 0 V

Plotis

4.7mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Aukštis

16.51mm

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more