N-Channel MOSFET, 273 A, 80 V, 3-Pin TO-220 Texas Instruments CSD19506KCS

RS kodas: 827-4903Gamintojas: Texas InstrumentsGamintojo kodas: CSD19506KCS
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

273 A

Maximum Drain Source Voltage

80 V

Serija

NexFET

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

2.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.67mm

Typical Gate Charge @ Vgs

120 nC @ 10 V

Plotis

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Aukštis

16.51mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 5,78

už 1 vnt. (be PVM)

€ 6,99

už 1 vnt. (su PVM)

N-Channel MOSFET, 273 A, 80 V, 3-Pin TO-220 Texas Instruments CSD19506KCS
Pasirinkite pakuotės tipą
sticker-462

€ 5,78

už 1 vnt. (be PVM)

€ 6,99

už 1 vnt. (su PVM)

N-Channel MOSFET, 273 A, 80 V, 3-Pin TO-220 Texas Instruments CSD19506KCS
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kaina
1 - 4€ 5,78
5 - 9€ 5,46
10 - 24€ 4,94
25 - 49€ 4,41
50+€ 4,20

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

273 A

Maximum Drain Source Voltage

80 V

Serija

NexFET

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

2.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.67mm

Typical Gate Charge @ Vgs

120 nC @ 10 V

Plotis

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Aukštis

16.51mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more