N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP Texas Instruments CSD19502Q5BT
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Pakuotės tipas
VSON-CLIP
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.3V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
195 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.1mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.1mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Aukštis
1.05mm
Serija
NexFET
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1V
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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€ 3,098
Each (In a Pack of 2) (be PVM)
€ 3,748
Each (In a Pack of 2) (su PVM)
2
€ 3,098
Each (In a Pack of 2) (be PVM)
€ 3,748
Each (In a Pack of 2) (su PVM)
2
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 2 - 8 | € 3,098 | € 6,20 |
| 10 - 18 | € 2,94 | € 5,88 |
| 20 - 48 | € 2,678 | € 5,36 |
| 50 - 98 | € 2,415 | € 4,83 |
| 100+ | € 2,31 | € 4,62 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Pakuotės tipas
VSON-CLIP
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.3V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
195 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.1mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.1mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Aukštis
1.05mm
Serija
NexFET
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1V
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products