N-Channel MOSFET, 100 A, 60 V, 8-Pin VSON Texas Instruments CSD18563Q5AT

RS kodas: 823-9256PGamintojas: Texas InstrumentsGamintojo kodas: CSD18563Q5AT
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

VSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

10.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.1mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Plotis

5mm

Transistor Material

Si

Serija

NexFET

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 0,744

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,90

Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 100 A, 60 V, 8-Pin VSON Texas Instruments CSD18563Q5AT
Pasirinkite pakuotės tipą
sticker-462

€ 0,744

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,90

Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 100 A, 60 V, 8-Pin VSON Texas Instruments CSD18563Q5AT
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

VSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

10.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.1mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Plotis

5mm

Transistor Material

Si

Serija

NexFET

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more