Texas Instruments NexFET N-Channel MOSFET, 100 A, 60 V, 8-Pin VSONP CSD18563Q5A

RS Stock No.: 827-4909PBrand: Texas InstrumentsManufacturers Part No.: CSD18563Q5A
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

VSONP

Series

NexFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

15 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.8mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Stock information temporarily unavailable.

€ 27.31

€ 1.092 Each (Supplied on a Reel) (Exc. Vat)

€ 33.05

€ 1.321 Each (Supplied on a Reel) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 100 A, 60 V, 8-Pin VSONP CSD18563Q5A
Select packaging type
sticker-462

€ 27.31

€ 1.092 Each (Supplied on a Reel) (Exc. Vat)

€ 33.05

€ 1.321 Each (Supplied on a Reel) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 100 A, 60 V, 8-Pin VSONP CSD18563Q5A
Stock information temporarily unavailable.
Select packaging type
sticker-462

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Reel
25 - 95€ 1.092€ 5.46
100 - 245€ 0.944€ 4.72
250 - 495€ 0.884€ 4.42
500+€ 0.836€ 4.18

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

VSONP

Series

NexFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

15 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.8mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more