N-Channel MOSFET, 54 A, 60 V, 3-Pin TO-220 Texas Instruments CSD18537NKCS

RS kodas: 145-6646Gamintojas: Texas InstrumentsGamintojo kodas: CSD18537NKCS
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

54 A

Maximum Drain Source Voltage

60 V

Serija

NexFET

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

14 nC @ 10 V

Plotis

4.7mm

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10.67mm

Number of Elements per Chip

1

Aukštis

16.51mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 1,102

Each (In a Tube of 50) (be PVM)

€ 1,334

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 54 A, 60 V, 3-Pin TO-220 Texas Instruments CSD18537NKCS
sticker-462

€ 1,102

Each (In a Tube of 50) (be PVM)

€ 1,334

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 54 A, 60 V, 3-Pin TO-220 Texas Instruments CSD18537NKCS
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

54 A

Maximum Drain Source Voltage

60 V

Serija

NexFET

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

14 nC @ 10 V

Plotis

4.7mm

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10.67mm

Number of Elements per Chip

1

Aukštis

16.51mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more