N-Channel MOSFET, 69 A, 60 V, 8-Pin SON Texas Instruments CSD18534Q5A

RS kodas: 827-4896Gamintojas: Texas InstrumentsGamintojo kodas: CSD18534Q5A
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

69 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

12.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

5mm

Transistor Material

Si

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.8mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Aukštis

1.1mm

Serija

NexFET

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 1,05

Each (In a Pack of 5) (be PVM)

€ 1,27

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 69 A, 60 V, 8-Pin SON Texas Instruments CSD18534Q5A
Pasirinkite pakuotės tipą
sticker-462

€ 1,05

Each (In a Pack of 5) (be PVM)

€ 1,27

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 69 A, 60 V, 8-Pin SON Texas Instruments CSD18534Q5A
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 20€ 1,05€ 5,25
25 - 45€ 0,739€ 3,70
50 - 245€ 0,647€ 3,23
250 - 495€ 0,556€ 2,78
500+€ 0,495€ 2,47

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

69 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

12.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

5mm

Transistor Material

Si

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.8mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Aukštis

1.1mm

Serija

NexFET

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more