N-Channel MOSFET, 169 A, 60 V, 3-Pin TO-220 Texas Instruments CSD18532KCS
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
169 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
5.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.67mm
Typical Gate Charge @ Vgs
21 nC @ 4.5 V
Plotis
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Serija
NexFET
Minimali darbinė temperatūra
-55 °C
Aukštis
16.51mm
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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€ 2,205
Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 2,668
Už kiekviena vnt. (tiekiama tuboje) (su PVM)
5
€ 2,205
Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 2,668
Už kiekviena vnt. (tiekiama tuboje) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 5 - 45 | € 2,205 | € 11,02 |
| 50 - 95 | € 1,732 | € 8,66 |
| 100 - 245 | € 1,365 | € 6,82 |
| 250 - 495 | € 1,312 | € 6,56 |
| 500+ | € 1,208 | € 6,04 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
169 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
5.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.67mm
Typical Gate Charge @ Vgs
21 nC @ 4.5 V
Plotis
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Serija
NexFET
Minimali darbinė temperatūra
-55 °C
Aukštis
16.51mm
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products