N-Channel MOSFET, 145 A, 40 V, 8-Pin SON Texas Instruments CSD18503Q5A
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
145 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
SON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
6.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
5.8mm
Typical Gate Charge @ Vgs
13 nC @ 4.5 V
Plotis
5mm
Transistor Material
Si
Serija
NexFET
Minimali darbinė temperatūra
-55 °C
Aukštis
1.1mm
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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€ 1,522
Each (In a Pack of 5) (be PVM)
€ 1,842
Each (In a Pack of 5) (su PVM)
5
€ 1,522
Each (In a Pack of 5) (be PVM)
€ 1,842
Each (In a Pack of 5) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 45 | € 1,522 | € 7,61 |
| 50 - 95 | € 1,208 | € 6,04 |
| 100 - 245 | € 0,938 | € 4,69 |
| 250 - 495 | € 0,882 | € 4,41 |
| 500+ | € 0,825 | € 4,13 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
145 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
SON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
6.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
5.8mm
Typical Gate Charge @ Vgs
13 nC @ 4.5 V
Plotis
5mm
Transistor Material
Si
Serija
NexFET
Minimali darbinė temperatūra
-55 °C
Aukštis
1.1mm
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products