N-Channel MOSFET, 3 A, 30 V, 3-Pin PICOSTAR Texas Instruments CSD17484F4T

RS kodas: 145-1158Gamintojas: Texas InstrumentsGamintojo kodas: CSD17484F4T
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

30 V

Serija

FemtoFET

Pakuotės tipas

PICOSTAR

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Plotis

0.64mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

1.04mm

Typical Gate Charge @ Vgs

1570 nC @ 0 V

Aukštis

0.2mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

0.9V

Produkto aprašymas

N-Channel FemtoFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 0,166

Each (On a Reel of 250) (be PVM)

€ 0,201

Each (On a Reel of 250) (su PVM)

N-Channel MOSFET, 3 A, 30 V, 3-Pin PICOSTAR Texas Instruments CSD17484F4T
sticker-462

€ 0,166

Each (On a Reel of 250) (be PVM)

€ 0,201

Each (On a Reel of 250) (su PVM)

N-Channel MOSFET, 3 A, 30 V, 3-Pin PICOSTAR Texas Instruments CSD17484F4T
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

30 V

Serija

FemtoFET

Pakuotės tipas

PICOSTAR

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Plotis

0.64mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

1.04mm

Typical Gate Charge @ Vgs

1570 nC @ 0 V

Aukštis

0.2mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

0.9V

Produkto aprašymas

N-Channel FemtoFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more