N-Channel MOSFET, 1.5 A, 30 V, 3-Pin PICOSTAR Texas Instruments CSD17483F4T

RS kodas: 145-0959Gamintojas: Texas InstrumentsGamintojo kodas: CSD17483F4T
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

PICOSTAR

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Plotis

0.64mm

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

1.04mm

Typical Gate Charge @ Vgs

1.01 nC @ 4.5 V

Number of Elements per Chip

1

Aukštis

0.35mm

Serija

FemtoFET

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Malaysia

Produkto aprašymas

N-Channel FemtoFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 0,056

Each (On a Reel of 250) (be PVM)

€ 0,068

Each (On a Reel of 250) (su PVM)

N-Channel MOSFET, 1.5 A, 30 V, 3-Pin PICOSTAR Texas Instruments CSD17483F4T
sticker-462

€ 0,056

Each (On a Reel of 250) (be PVM)

€ 0,068

Each (On a Reel of 250) (su PVM)

N-Channel MOSFET, 1.5 A, 30 V, 3-Pin PICOSTAR Texas Instruments CSD17483F4T
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

PICOSTAR

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Plotis

0.64mm

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

1.04mm

Typical Gate Charge @ Vgs

1.01 nC @ 4.5 V

Number of Elements per Chip

1

Aukštis

0.35mm

Serija

FemtoFET

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Malaysia

Produkto aprašymas

N-Channel FemtoFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more