N-Channel MOSFET, 5 A, 30 V, 6-Pin SON Texas Instruments CSD17313Q2

RS kodas: 827-4849Gamintojas: Texas InstrumentsGamintojo kodas: CSD17313Q2
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

42 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2mm

Typical Gate Charge @ Vgs

2.1 nC @ 4.5 V

Plotis

2mm

Transistor Material

Si

Serija

NexFET

Minimali darbinė temperatūra

-55 °C

Aukštis

0.8mm

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€ 0,50

Each (In a Pack of 10) (be PVM)

€ 0,605

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 5 A, 30 V, 6-Pin SON Texas Instruments CSD17313Q2
sticker-462

€ 0,50

Each (In a Pack of 10) (be PVM)

€ 0,605

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 5 A, 30 V, 6-Pin SON Texas Instruments CSD17313Q2
Sandėlio informacija laikinai nepasiekiama.
sticker-462

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kiekisVieneto kainaPer Pakuotė
10 - 40€ 0,50€ 5,00
50 - 190€ 0,374€ 3,74
200 - 490€ 0,284€ 2,84
500+€ 0,277€ 2,77

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

42 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2mm

Typical Gate Charge @ Vgs

2.1 nC @ 4.5 V

Plotis

2mm

Transistor Material

Si

Serija

NexFET

Minimali darbinė temperatūra

-55 °C

Aukštis

0.8mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more