N-Channel MOSFET, 50 A, 30 V, 8-Pin VSON-CLIP Texas Instruments CSD17308Q3T

RS kodas: 133-0151Gamintojas: Texas InstrumentsGamintojo kodas: CSD17308Q3T
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

VSON-CLIP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

16.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.4mm

Typical Gate Charge @ Vgs

7.4 nC

Plotis

3.4mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1V

Serija

NexFET

Aukštis

1.1mm

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 0,168

Each (In a Pack of 10) (be PVM)

€ 0,203

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 50 A, 30 V, 8-Pin VSON-CLIP Texas Instruments CSD17308Q3T
Pasirinkite pakuotės tipą
sticker-462

€ 0,168

Each (In a Pack of 10) (be PVM)

€ 0,203

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 50 A, 30 V, 8-Pin VSON-CLIP Texas Instruments CSD17308Q3T
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

VSON-CLIP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

16.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.4mm

Typical Gate Charge @ Vgs

7.4 nC

Plotis

3.4mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1V

Serija

NexFET

Aukštis

1.1mm

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more