N-Channel MOSFET, 47 A, 30 V, 8-Pin SON Texas Instruments CSD17308Q3

RS kodas: 162-8541Gamintojas: Texas InstrumentsGamintojo kodas: CSD17308Q3
brand-logo
View all in MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

47 A

Maximum Drain Source Voltage

30 V

Serija

NexFET

Pakuotės tipas

SON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

16.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Transistor Material

Si

Ilgis

3.4mm

Typical Gate Charge @ Vgs

3.9 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Plotis

3.4mm

Number of Elements per Chip

1

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,368

Each (On a Reel of 2500) (be PVM)

€ 0,445

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 47 A, 30 V, 8-Pin SON Texas Instruments CSD17308Q3
sticker-462

€ 0,368

Each (On a Reel of 2500) (be PVM)

€ 0,445

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 47 A, 30 V, 8-Pin SON Texas Instruments CSD17308Q3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

47 A

Maximum Drain Source Voltage

30 V

Serija

NexFET

Pakuotės tipas

SON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

16.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Transistor Material

Si

Ilgis

3.4mm

Typical Gate Charge @ Vgs

3.9 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Plotis

3.4mm

Number of Elements per Chip

1

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more